Patent · US Active

Integrated circuit resistor

US8921946B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 11, 2011
Grant dateDec 30, 2014
Priority date
Expiry dateNov 8, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/017
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like dopant profile that minimizes resistance variation from subsequent planarization variation. A contact is disposed over the resistor. A method of fabricating such a semiconductor device is also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.