Galvanically-isolated device and method for fabricating the same
US8921988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2013 |
| Grant date | Dec 30, 2014 |
| Priority date | — |
| Expiry date | Dec 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an interconnection structure. The interconnection structure includes an inter-metal dielectric layer structure. A first plate, a second plate and a third plate are formed on the inter-metal dielectric layer structure, separated from each other. The first plate, the second plate and a first portion of the inter-metal dielectric layer structure are composed of a first capacitor. The first plate, the third plate and a second portion of the inter-metal dielectric layer structure are composed of a second capacitor connected in series with the first capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.