Method for transferring graphene layer
US8926852B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB32B2457/14
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention discloses a method for transferring a graphene layer. The graphene layer formed on a metal carrier layer is electrostatically adsorbed on a substrate by electrostatic charges, and then the substrate having the graphene layer formed on the metal carrier layer is immersed in an etching solution to remove the metal carrier layer, thereby completing the transfer of the graphene layer. In addition to being able to provide a simple method for transferring the graphene layer, the present invention further solves a problem of retaining organic residues, thus enhancing electrical properties of the transferred graphene layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.