Chemical vapor deposition apparatus and method for manufacturing light-emitting devices using same
US8927302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2011 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a CVD apparatus and a method of manufacturing a light emitting device using the same. The CVD apparatus includes a chamber body including a susceptor having at least one pocket part having a wafer stably mounted therein; a chamber cover provided with the chamber body to open or close the chamber body and having a reaction space between the susceptor and the chamber cover; a reactive gas supplier supplying the reactive gas into the reaction space to allow the reactive gas to flow across a surface of the susceptor; and a non-reactive gas supplier supplying a non-reactive gas into the reaction space to allow the non-reactive gas to flow across a surface of the chamber cover between the susceptor and the chamber cover so as to prevent the reactive gas from contacting the surface of the chamber cover.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.