Method for producing a selective doping structure in a semiconductor substrate in order to produce a photovoltaic solar cell

US8927317B2 · kind B2 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• Albert-Ludwigs-Universitaet Freiburg · DE

Inventors

• Ulrich Jager · Glückstadt, DE
• Daniel Biro · Glückstadt, DE
• Anne-Kristin Volk · Glückstadt, DE
• Johannes Seiffe · Glückstadt, DE
• Sebastian Mack · Glückstadt, DE
• Andreas Wolf · Glückstadt, DE
• Ralf Preu · Glückstadt, DE

Key dates

• Filing date: Jun 16, 2011
• Grant date: Jan 6, 2015
• Expiry date: Dec 30, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.