Semiconductor device and fabrication method thereof
US8927374B2 · kind B2 · utility
6Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 4, 2011 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jul 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
Abstract
A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of the substrate to enhance carrier mobility and upgrade the device performance. The improved formation method is achieved by providing a treatment to redistribute at least a portion of the corner in the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.