Semiconductor devices and methods of fabricating the same
US8927389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Nov 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes providing a substrate including a first region and a second region, forming a first trench having a first width in the first region and a second trench having a second width in the second region, and the second width is greater than the first width. The method also includes forming a first insulation layer in the first and second trenches, removing the first insulation layer in the second trench to form a first insulation pattern that includes the first insulation layer remaining in the first trench, forming on the substrate a second insulation layer that fills the second trench, and the second insulation layer includes a different material from the first insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.