Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
US8927428B2 · kind B2 · utility
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Key dates
| Filing date | Nov 2, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps:(1) providing an n-type semiconductor substrate,(2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate,(3) firing the dried aluminum paste, and(4) removing the fired aluminum paste with water,wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.
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