Patent · US Active

Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid

US8927429B2 · kind B2 · utility

0Cited by

7References

15Claims

0Family size

Assignee

BASF SE

Inventors

Christine Schmitt · Kunheim, FR
Andrey Karpov · Metuchen, US
Frank Rosowski · Mannheim, DE
Mario Brands · Ludwigshafen, DE
Yuzhuo Li

Key dates

Filing date	Oct 4, 2011
Grant date	Jan 6, 2015
Priority date	—
Expiry date	Oct 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/3212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid of the formula HaXbPsMOyVzOc wherein X=any cation other than H 8<y<18 8<z<14 56<c<105 a+b=2c−6y−5(3+z) b>0 and a>0 (formula I) or a salt thereof, and, (C) an aqueous medium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.