Patent · US Active

Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof

US8927967B2 · kind B2 · utility

2Cited by

1References

15Claims

0Family size

Assignee

Karlsruhe Institute of Technology · DE

Inventors

Subho Dasgupta · Blankenloch, DE
Horst Hahn · Champaign, US
Babak Nasr · Blankenloch, DE

Key dates

Filing date	Apr 24, 2013
Grant date	Jan 6, 2015
Priority date	—
Expiry date	Apr 24, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/119
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.