Semiconductor device and manufacturing method thereof
US8927990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
Abstract
Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.