Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device
US8928030B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2013 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Apr 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n− drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NPT structure device. A low life time region is also provided in the interface between the n− drift region and a p collector region, and extends between the n− drift region and the p collector region. Thus, it is possible to provide a low-loss semiconductor device, a method for manufacturing the semiconductor device and a method for controlling the semiconductor device, in which the reverse recovery loss is reduced while the reverse recovery current peak and the jump voltage peak during reverse recovery are suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.