Optoelectronic semiconductor chip and method for producing same

US8928052B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Karl Engl · Niedergebraching, DE
• Lutz Hoeppel · Alteglofsheim, DE
• Patrick Rode · Regensburg, DE
• Matthias Sabathil · Regensburg, DE

Key dates

• Filing date: Mar 13, 2009
• Grant date: Jan 6, 2015
• Expiry date: Apr 20, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.