Method and apparatus for thin film module with dotted interconnects and vias

US8928105B2 · kind B2 · utility

Assignee

• FLISOM AG · CH

Inventors

• Roger Ziltener · Sursee, CH
• Roland Kern · Chesterfield, US
• David Bremaud · Uetikon am See, CH
• Björn Keller · Frauenfeld, CH

Key dates

• Filing date: May 27, 2011
• Grant date: Jan 6, 2015
• Expiry date: May 27, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method to fabricate monolithically-integrated optoelectronic module apparatuses (100) comprising at least two series-interconnected optoelectronic components (104, 106, 108). The method includes deposition and scribing on an insulating substrate or superstate (110) of a 3-layer stack in order (a, b, c) or (c, b, a) comprising: (a) back-contact electrodes (122, 124, 126, 128), (b) semiconductive layer (130), and (c) front-contact components (152, 154, 156, 158). Via holes (153, 155, 157) are drilled so that heat of the drilling process causes a metallization at the surface of said via holes that renders conductive the semi-conductive layer's surface (132, 134, 136, 138) of said via holes, thereby establishing series-interconnecting electrical paths between optoelectronic components (104, 106, 108) by connecting first front-contact components (154, 156) to second back-contact electrodes (124, 126).