Noise decoupling structure with through-substrate vias
US8928127B2 · kind B2 · utility
5Cited by
47References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2010 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | May 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a substrate having a front surface and a back surface; an integrated circuit device at the front surface of the substrate; and a metal plate on the back surface of the substrate, wherein the metal plate overlaps substantially an entirety of the integrated circuit device. A guard ring extends into the substrate and encircles the integrated circuit device. The guard ring is formed of a conductive material. A through substrate via (TSV) penetrates through the substrate and electrically couples to the metal plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.