Semiconductor drive circuit and power conversion apparatus using same
US8928363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2011 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The dead time is secured stably in a semiconductor drive circuit for switching devices using a wide band gap semiconductor. The drain terminal of the switching device of an upper arm is connected to the positive terminal of a first power supply, the source terminal of the switching device of a lower arm is connected to the negative terminal of the first power supply, and the source terminal of the switching device of the upper arm is connected with the drain terminal of the switching device of the lower arm. A gate drive circuit provided for each switching device includes an FET circuit and a parallel circuit made of a parallel connection of a first resistor and a first capacitor and having a first terminal connected to the gate terminal of the switching device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.