Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (MOS) transistors
US8928365B2 · kind B2 · utility
6Cited by
13References
21Claims
0Family size
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Key dates
| Filing date | Oct 23, 2012 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Oct 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.