Electrostatic discharge protection circuit
US8929041B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2013 |
| Grant date | Jan 6, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit for an implantable medical device can include a substrate, a first capacitor, and an electrostatic discharge (ESD) protection circuit. The first capacitor can include an electrically conductive lower polysilicon terminal and an electrically conductive upper polysilicon terminal that can be separated from the lower polysilicon terminal by a first capacitor dielectric material. The ESD protection circuit can include an ESD shunt transistor and a second capacitor. The ESD shunt transistor can be configured to be normally off, but can be configured to turn on and conduct between first and second power supply rails in response to an ESD event exceeding a specified ESD event threshold value. The second capacitor can includes a first substrate terminal and an electrically conductive second polysilicon terminal that can be separated from the first substrate terminal by a second capacitor dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.