Semiconductor interband lasers and method of forming

US8929417B2 · kind B2 · utility

Assignee

• The Board of Regents of the University of Oklahoma · US

Inventors

• Rui Yang · Jiaocheng District, CN
• Tetsuya Mishima · Norman, US
• Michael B. Santos · Norman, US
• Zhaobing Tian · Albuquerque, US
• Matthew B. Johnson · Norman, US
• Robert T. Hinkey · Norman, US

Key dates

• Filing date: Dec 21, 2010
• Grant date: Jan 6, 2015
• Expiry date: Aug 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3422
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.