Method for producing piezoelectric composite substrate
US8932686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2009 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/045
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He+ ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apart from a surface of the single-crystal base. In the separation step, the microcavities formed in the ion-implantation step are subjected to thermal stress to divide the separation layer of the piezoelectric single-crystal base, thereby detaching the single-crystal thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.