Vertical stacking of graphene in a field-effect transistor
US8932919B2 · kind B2 · utility
13Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.