Method of fabricating a FinFET device

US8932957B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ming-Feng Shieh · Yongkang, TW
• Chen Chen · Champaign, US

Key dates

• Filing date: May 13, 2013
• Grant date: Jan 13, 2015
• Expiry date: Jul 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A method includes receiving a substrate having an etch stop layer deposited over the substrate and a dummy mandrel layer deposited over the etch stop layer, forming a plurality of hard mask patterns using a hard mask layer deposited over the dummy mandrel layer, wherein the hard mask patterns includes a first dimension adjusted by a predetermined value, depositing a first spacer layer over the hard mask patterns, wherein a thickness of the first spacer layer is adjusted by the predetermined value, forming a plurality of spacer fins in the dummy mandrel layer, wherein the spacer fins include a second dimension, a first space, and a second space, performing a first fin cut process to remove at least one spacer fin, adjusting the second dimension to a target dimension, performing a second fin cut process, and forming a plurality of fin structures in the substrate by etching the spacer fins.