Transistor with MIM (Metal-Insulator-Metal) capacitor
US8933514B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jan 25, 2013 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The orientation polarization (positive and negative) of the Si—N bonds and the Si—O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a silicon oxynitride film with a small voltage secondary coefficient is formed, and is applied as a capacitive insulating film for use in a MIM capacitor. Specifically, the refractive index “n” of the silicon oxynitride film satisfies 1.47≦n≦1.53, for light with a wavelength of 633 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.