Single-chip referenced full-bridge magnetic field sensor
US8933523B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Apr 6, 2012 |
| Grant date | Jan 13, 2015 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/098
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.