Semiconductor apparatus and method of fabrication for a semiconductor apparatus

US8933525B2 · kind B2 · utility

Assignee

• Q-CELLS SE · DE

Inventors

• Peter Engelhart · Zörbig, DE
• Robert Seguin · Berlin, DE
• Wilhelmus Mathijs Marie Kessels · Tilburg, NL
• Gijs Dingemans · Tilburg, NL

Key dates

• Filing date: May 31, 2010
• Grant date: Jan 13, 2015
• Expiry date: May 31, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.