Integrated circuit stack with integrated electromagnetic interference shielding

US8933544B2 · kind B2 · utility

Assignee

• OmniVision Technologies, Inc. · US

Inventors

• Duli Mao · Sunnyvale, US
• Hsin-Chih Tai · San Jose, US
• Yin Qian · Milpitas, US
• Tiejun Dai · Santa Clara, US
• Howard E. Rhodes · Boise, US
• Hongli Yang · Cupertino, US

Key dates

• Filing date: Jul 12, 2012
• Grant date: Jan 13, 2015
• Expiry date: Apr 11, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/018

Abstract

An integrated circuit system includes a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed within a first metal layer oxide. A second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor is disposed within a second metal layer oxide. A frontside of the first device wafer is bonded to a frontside of the second device wafer at a bonding interface. A conductive path couples the first conductor to the second conductor through the bonding interface. A first metal EMI shield is disposed in one of the first metal oxide layer and second metal layer oxide layer. The first EMI shield is included in a metal layer of said one of the first metal oxide layer and the second metal layer oxide layer nearest to the bonding interface.