Methods to fabricate non-metal films on semiconductor substrates using physical vapor deposition
US8936703B2 · kind B2 · utility
0Cited by
5References
9Claims
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Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Apr 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to methods for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or for controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.