Technique for ion implanting a target
US8937003B2 · kind B2 · utility
2Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2012 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.