Method of forming crack free gap fill
US8937011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Jul 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques disclosed herein may achieve crack free filling of structures. A flowable film may substantially fill gaps in a structure and extend over a base in an open area adjacent to the structure. The top surface of the flowable film in the open area may slope down and may be lower than top surfaces of the structure. A capping layer having compressive stress may be formed over the flowable film. The bottom surface of the capping layer in the open area adjacent to the structure is lower than the top surfaces of the lines and may be formed on the downward slope of the flowable film. The flowable film is cured after forming the capping layer, which increases tensile stress of the flowable film. The compressive stress of the capping layer counteracts the tensile stress of the flowable film, which may prevent a crack from forming in the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.