Semiconductor device and electronic device
US8937304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2012 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Sep 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
A first field-effect transistor provided over a substrate in which an insulating region is provided over a first semiconductor region and a second semiconductor region is provided over the insulating region; an insulating layer provided over the substrate; a second field-effect transistor that is provided one flat surface of the insulating layer and includes an oxide semiconductor layer; and a control terminal are provided. The control terminal is formed in the same step as a source and a drain of the second field-effect transistor, and a voltage for controlling a threshold voltage of the first field-effect transistor is supplied to the control terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.