Semiconductor integrated circuit device
US8937365B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2013 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Sep 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit device including fuse elements for performing laser trimming processing, a dummy fuse formed of a first polycrystalline Si film is formed between the fuse elements formed of a second polycrystalline Si film, and a nitride film is formed on the dummy fuse. In this manner, the step difference of an interlayer film caused by the presence and absence of the fuse element formed of the polycrystalline Si film is eliminated, to thereby prevent SOG films having moisture-absorption characteristics on an inner surface of a fuse opening region and on an internal element side from connecting to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.