Finding optimal read thresholds and related voltages for solid state memory
US8937838B2 · kind B2 · utility
4Cited by
3References
28Claims
0Family size
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Key dates
| Filing date | Nov 30, 2012 |
| Grant date | Jan 20, 2015 |
| Priority date | — |
| Expiry date | Apr 13, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.