Patent · US Active

Polycrystalline silicon portion and method for breaking a silicon body

US8939336B2 · kind B2 · utility

0Cited by

5References

10Claims

0Family size

Assignee

Wacker Chemie AG · DE

Inventors

Laszlo Fabry · Burghausen, DE
Peter Gruebl · Triftern, DE
Christian Huber · Zwingenberg, DE

Key dates

Filing date	Dec 10, 2012
Grant date	Jan 27, 2015
Priority date	—
Expiry date	Jun 19, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T225/10
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

The invention relates to a polycrystalline silicon portion having at least one fracture surface or cut surface, which includes metal contamination of from 0.07 ng/cm2 to 1 ng/cm2. The invention also relates to a method for breaking a silicon body, preferably a rod of polycrystalline silicon, including the steps: a) determining the lowest natural bending frequency of the silicon body; b) exciting the silicon body in its lowest natural bending frequency by means of an oscillation generator, the excitation being carried out at an excitation point of the silicon body such that the silicon body breaks at the excitation point; so that a silicon portion having a fracture surface results which includes metal contamination of from 0.07 ng/cm2 to 1 ng/cm2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.