Patent · US Active

Process for producing polycrystalline silicon

US8940264B2 · kind B2 · utility

0Cited by

5References

7Claims

0Family size

Assignee

Wacker Chemie AG · DE

Inventors

Walter Haeckl · Zeilarn, DE
Karl Hesse · Sarstedt, DE
Wilhelm Hoebold · Emmerting, DE
Reinhard Wolf · Isny im Allgäu, DE

Key dates

Filing date	Aug 29, 2011
Grant date	Jan 27, 2015
Priority date	—
Expiry date	Nov 15, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.