Environmental barrier for a refractory substrate containing silicon
US8940417B2 · kind B2 · utility
21Cited by
10References
8Claims
0Family size
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Key dates
| Filing date | Dec 23, 2009 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
In order to protect a substrate having at least a portion adjacent to a surface that is made of a refractory material containing silicon, while the substrate is in use at high temperature in a medium that is oxidizing and wet, there is formed on the surface of the substrate an environmental barrier that contains no boron and that has at least one layer that is essentially constituted by a system of oxides formed by at least one rare earth oxide, silica, and alumina, and that is capable of self-healing by maintaining the presence of at least one solid phase in a temperature range extending up to at least 1400° C. approximately.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.