Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films
US8940578B2 · kind B2 · utility
5Cited by
6References
14Claims
0Family size
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Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.