Method for surface treatment on a metal oxide and method for preparing a thin film transistor
US8940647B2 · kind B2 · utility
5Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2012 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O2, and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.