Uncooled infrared detector and methods for manufacturing the same
US8941064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2011 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Oct 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/193
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.