Semiconductor light emitting element
US8941119B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2014 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element comprises an optical semiconductor laminated layer providing vias, an electrode that is disposed on a surface of the optical semiconductor laminated layer and separated from the second semiconductor layer in a peripheral portion of the electrode, a first transparent insulating layer that is disposed between the peripheral portion of the electrode and the optical semiconductor laminated layer, and a second transparent insulating layer that is disposed to cover the electrode, that envelops the peripheral portion of the electrode together with the first transparent insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.