Light-emitting device including nitride-based semiconductor omnidirectional reflector
US8941140B2 · kind B2 · utility
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3References
9Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/814
Abstract
A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.