Semiconductor device and method for producing the same
US8941174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2011 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n−-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n−-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.