ESD protection apparatus
US8941959B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2012 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge (ESD) protection structure comprises a first NPN transistor and a second NPN transistor connected in parallel. The bases of the first NPN transistor and the second NPN transistor are coupled together and further coupled to a first voltage potential and a second voltage potential through two deep trench capacitors respectively. The ESD protection structure further comprises a third deep trench capacitor and a fourth deep trench capacitor coupled between the first voltage potential and the second voltage potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.