Nonvolatile memory device and a method of adjusting a threshold voltage of a ground selection transistor thereof
US8942042B2 · kind B2 · utility
7Cited by
9References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 21, 2013 |
| Grant date | Jan 27, 2015 |
| Priority date | — |
| Expiry date | May 9, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of adjusting a threshold voltage of a ground selection transistor in a nonvolatile memory device includes providing a first voltage to a gate of a first ground selection transistor in a read operation and providing a second voltage to a gate of a second ground selection transistor in the read operation. The nonvolatile memory device includes at least one string, the string having string selection transistors, memory cells and the first and second ground selection transistors connected in series and stacked on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.