Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
US8945966B2 · kind B2 · utility
6Cited by
6References
22Claims
0Family size
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Key dates
| Filing date | Sep 10, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jul 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.