Thin-film transistor, array substrate having the thin-film transistor and method of manufacturing the array substrate
US8946005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2011 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.