Semiconductor device and method of manufacturing semiconductor device
US8946044B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
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Key dates
| Filing date | Nov 29, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.