Engineering of porous coatings formed by ion-assisted direct deposition
US8946061B2 · kind B2 · utility
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2References
13Claims
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Key dates
| Filing date | Aug 28, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Aug 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that comprise one or more of: germanium precursor ions and silicon precursor ions in a plasma of a plasma chamber, in which the semiconductor precursor ions are operative to form a porous film on the workpiece. The method further includes directing the semiconductor precursor ions to the workpiece over a range of angles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.