Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
US8946062B2 · kind B2 · utility
0Cited by
8References
16Claims
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Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 21, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a polycrystalline silicon film includes: depositing a catalyst layer including nickel and depositing nickel nanoparticles on a substrate; exposing the catalyst layer and the nanoparticles to at least silane gas; and heat treating the substrate coated with the catalyst layer and the nanoparticles during at least part of the exposing to silane gas in growing a silicon based film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.