Patent · US Active

Method of making a thin crystalline semiconductor material

US8946067B2 · kind B2 · utility

0Cited by
3References
18Claims
0Family size

Inventor

Key dates

Filing dateJun 12, 2012
Grant dateFeb 3, 2015
Priority date—
Expiry dateJun 12, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02664
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of preparing a thin material layer from a semiconductor substrate is presented. The method entails forming a stress-generating epitaxial layer on a base substrate to form a stressed region, and achieving separation along the stressed region to produce a first part and a second part. The stress-generating epitaxial layer may be boron-doped or a Si(1-x)—Gex material. The separation may be achieved with spalling or etching.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.