Method of manufacturing a semiconductor device
US8946077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of conductive lines separated from one another in a first direction via a slender hole and extending in a second direction perpendicular to the first direction, forming a first insulation layer filling the slender hole between the plurality of conductive lines, forming a plurality of first isolated holes separated from one another between the plurality of conductive lines in the first direction and the second direction by patterning the first insulation layer, forming a liner layer in the first isolated holes, filling a second insulation layer having an etching selectivity with respect to the first insulation layer, in the first isolated holes on the liner layer and forming a plurality of second isolated holes between the conductive lines by removing the first insulation layer using the etching selectivity between the second insulation layer and the first insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.